標題: Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode
作者: Zheng, Zhi-Wei
Cheng, Chun-Hu
Chou, Kun-I
Liu, Ming
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 10-十二月-2012
摘要: Narrow current distribution, good endurance, and low 28 mu W switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772003]
URI: http://dx.doi.org/10.1063/1.4772003
http://hdl.handle.net/11536/20839
ISSN: 0003-6951
DOI: 10.1063/1.4772003
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 24
結束頁: 
顯示於類別:期刊論文


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