標題: CHARACTERISTICS OF SELF-INDUCED LIGHTLY-DOPED-DRAIN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITION SIO2 AS GATE-INSULATOR AND PASSIVATION-LAYER
作者: YEH, CF
YANG, TZ
CHEN, TJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-1995
摘要: As the passivation layer on the top of undoped offset region for offset-gate structured poly-Si TFTs is exposed to hydrogen plasma, a lightly-doped-like drain region could be equivalently self-induced. The hydrogenated polycrystalline silicon thin-film transistor of this structure, named self-induced Lightly-doped-drain (SI-LDD) poly-Si TFTs, was first developed with liquid-phase deposition oxide as both the gate insulator and the passivation layer. This paper describes the optimum hydrogenation condition, and the electrical characteristics for the novel SI-LDD poly-Si TFTs. The effects of DC electrical stress on SI-LDD poly-Si TFTs are also described. Finally a model is proposed to explain the degradation phenomena observed in our SI-LDD devices.
URI: http://dx.doi.org/10.1109/16.370064
http://hdl.handle.net/11536/2081
ISSN: 0018-9383
DOI: 10.1109/16.370064
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 2
起始頁: 307
結束頁: 314
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QD76800016.pdf