標題: 830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diodes With Improved Temperature and Divergence Characteristics
作者: Hung, Chih-Tsang
Lu, Tien-Chang
光電工程學系
Department of Photonics
關鍵字: AlGaAs-InGaAs heterostructure;laser beam divergence;laser diodes;quantum wells
公開日期: 1-一月-2013
摘要: The 830-nm AlGaAs/InGaAs laser diodes (LDs) adopting multistep-graded index double-barrier separate confinement heterostructures (GRIN-DBSCHs) with small divergence beams and improved temperature characteristics under a high-output-power operation are reported. The double-barrier separate confinement heterostructure (DBSCH) design provides good carrier confinement and prevents current leakage by adding a multistep grading layer between cladding and waveguide layers. Simultaneously, the DBSCH design can facilitate reducing the divergence angle at high-power operation and widening the transverse mode distribution to decrease the power density around emission facets. In addition, the p-side doping depth is optimized to effectively raise the barrier height for reducing the electron overflow. Gaussian-like narrow far-field patterns are measured with the full-width at half-maximum vertical divergence angle to be between 11 degrees and 13 degrees. A threshold current of 16.5 mA and a slop efficiency of 0.98 W/A are obtained in the continuous-wave operation condition at room temperature. The maxima optical power densities of 21.5 MW/cm(2) per laser facet and good characteristic temperature values of threshold current (T-0) and slope efficiency (T-1) are achieved.
URI: http://dx.doi.org/10.1109/JQE.2012.2231053
http://hdl.handle.net/11536/20801
ISSN: 0018-9197
DOI: 10.1109/JQE.2012.2231053
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 49
Issue: 1
起始頁: 127
結束頁: 132
顯示於類別:期刊論文


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  1. 000312829500002.pdf