標題: Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
作者: Van-Truong Dai
Lin, Sheng-Di
Lin, Shih-Wei
Wu, Jau-Yang
Li, Liang-Chen
Lee, Chien-Ping
電子工程學系及電子研究所
奈米科技中心
Department of Electronics Engineering and Institute of Electronics
Center for Nanoscience and Technology
公開日期: 1-一月-2013
摘要: A lateral two-dimensional p-i-n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.52.014001
http://hdl.handle.net/11536/20795
ISSN: 0021-4922
DOI: 10.7567/JJAP.52.014001
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 52
Issue: 1
結束頁: 
顯示於類別:期刊論文


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  1. 000312731500025.pdf