標題: Improved 1.3-mu m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature
作者: Lin, Wei-Hsun
Wang, Kai-Wei
Lin, Shih-Yen
Wu, Meng-Chyi
光電學院
光電工程學系
College of Photonics
Department of Photonics
關鍵字: GaSb quantum rings;light-emitting devices
公開日期: 1-Jan-2013
摘要: Room-temperature 1.3-mu m electroluminescence is observed for the InGaAs-capped GaSb quantum rings (QRs). The increasing carrier density in the InGaAs-capped type-II GaSb QRs would induce a larger blue shift in the same laser pumping power span and enhance the luminescence intensity. The enhanced luminescence intensity, a larger blue shift of peak wavelength, and 1.3-mu m emission of the InGaAs-capped QR structure have revealed its potential application in multi-wavelength light-emitting devices in the near infrared range.
URI: http://dx.doi.org/10.1109/LPT.2012.2229700
http://hdl.handle.net/11536/20788
ISSN: 1041-1135
DOI: 10.1109/LPT.2012.2229700
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 25
Issue: 1
起始頁: 97
結束頁: 99
Appears in Collections:Articles


Files in This Item:

  1. 000312890100027.pdf