Title: High-Performance Polyimide-Based ReRAM for Nonvolatile Memory Application
Authors: Liu, Sheng-Hsien
Yang, Wen-Luh
Wu, Chi-Chang
Chao, Tien-Sheng
Ye, Meng-Ru
Su, Yu-Yuan
Wang, Po-Yang
Tsai, Ming-Jui
Department of Electrophysics
Keywords: Polyimide (PI);resistive random access memory (ReRAM) devices;sol-gel
Issue Date: 1-Jan-2013
Abstract: In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 10(5)) and superior endurance (> 10(5) cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.
URI: http://dx.doi.org/10.1109/LED.2012.2224633
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2224633
Volume: 34
Issue: 1
Begin Page: 123
End Page: 125
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