標題: Electrical and Reliability Investigation of Cu TSVs With Low-Temperature Cu/Sn and BCB Hybrid Bond Scheme
作者: Chang, Yao-Jen
Ko, Cheng-Ta
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hybrid bonding;through-silicon via (TSV);3-D integration
公開日期: 1-一月-2013
摘要: A wafer-level 3-D integration scheme using Cu through-silicon vias (TSVs) and fine-pitch Cu/Sn-BCB hybrid bonding was developed and investigated with electrical characterization and reliability assessment. The hybrid bonding could be achieved below 250 degrees C. Low Kelvin resistance and stable daisy chain resistance were achieved in 5- and 10-mu m TSV test structures across the whole wafer. Without obvious deterioration in reliability test results, the integrated Cu TSV and hybrid bond scheme can be potentially designed for 3-D integration applications.
URI: http://dx.doi.org/10.1109/LED.2012.2225136
http://hdl.handle.net/11536/20786
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2225136
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 1
起始頁: 102
結束頁: 104
顯示於類別:期刊論文


文件中的檔案:

  1. 000312834200034.pdf