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dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorKuo, Shou-Yien_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorLin, Woei-Tyngen_US
dc.contributor.authorLai, Fang-Ien_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:28:38Z-
dc.date.available2014-12-08T15:28:38Z-
dc.date.issued2012-08-21en_US
dc.identifier.issn1931-7573en_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-7-468en_US
dc.identifier.urihttp://hdl.handle.net/11536/20698-
dc.description.abstractThis paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 mu m/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001](InN) // [0001](GaN) and ((2) over bar 110)(InN) // ((2) over bar 110)(GaN). The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV.en_US
dc.language.isoen_USen_US
dc.subjectRF-MOMBEen_US
dc.subjectInNen_US
dc.subjectnanorodsen_US
dc.titleStudy of InN epitaxial films and nanorods grown on GaN template by RF-MOMBEen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-7-468en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume7en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000310972500001-
dc.citation.woscount0-
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