標題: Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
作者: Chen, Wei-Chun
Kuo, Shou-Yi
Wang, Wei-Lin
Tian, Jr-Sheng
Lin, Woei-Tyng
Lai, Fang-I
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: RF-MOMBE;InN;nanorods
公開日期: 21-八月-2012
摘要: This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 mu m/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001](InN) // [0001](GaN) and ((2) over bar 110)(InN) // ((2) over bar 110)(GaN). The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV.
URI: http://dx.doi.org/10.1186/1556-276X-7-468
http://hdl.handle.net/11536/20698
ISSN: 1931-7573
DOI: 10.1186/1556-276X-7-468
期刊: NANOSCALE RESEARCH LETTERS
Volume: 7
Issue: 
結束頁: 
顯示於類別:期刊論文


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