標題: The effects of oxygen annealing on the electrical characteristics of hydrothermally grown zinc oxide thin-film transistors
作者: Wang, Jyh-Liang
Yang, Po-Yu
Hsieh, Tsang-Yen
Hwang, Chuan-Chou
Shye, Der-Chi
Lee, I-Che
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Zinc oxide (ZnO);Hydrothermal growth (HTG);Thin-film transistors (TFTs);Oxygen annealing;Lateral-grain growth
公開日期: 1-十一月-2012
摘要: High-performance transparent zinc oxide (ZnO) thin-film transistors (TFTs) with location-controlled lateral-grain growth were fabricated by hydrothermal method. The ZnO active channel was laterally grown with aluminum-doped ZnO (AZO) seed layer underneath the Ti/Pt film. Compare to the unannealed ZnO TFTs, the annealed devices reveal the high-quality ZnO layer with the compensated structural defects in the channel region after oxygen ambient annealing at 400 degrees C. Therefore, the superior device performances (i.e. the excellent filed-effect mobility of 9.07 cm(2)/V s, positive threshold voltage of 2.25 V. high on/off current ratio of similar to 10(6), and low gate leakage current of <1 nA) of hydrothermally grown ZnO TFTs can be achieved with oxygen ambient annealing. (c) 2012 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2012.05.015
http://hdl.handle.net/11536/20678
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.05.015
期刊: SOLID-STATE ELECTRONICS
Volume: 77
Issue: 
起始頁: 72
結束頁: 76
顯示於類別:期刊論文


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