標題: Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization
作者: Su, Chun-Jung
Huang, Yu-Feng
Lin, Horng-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
關鍵字: Metal-induced lateral crystallization (MILC);Nanowire (NW);Poly-Si;Solid-phase crystallization (SPC);Thin-film transistors (TFTs)
公開日期: 1-十一月-2012
摘要: In this paper, we present a comprehensive study on the effects of layout design and re-crystallization temperature on the material and electrical characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) with metal-induced lateral crystallized (MILC) nanowire (NW) channels. It is found that the off-state leakage current shows strong dependence on the arrangement of MILC seeding windows, while the number of smaller solid-phase-crystallized (SPC) grains in the channel is reduced by lowering the re-crystallization temperature, thus improving the on-state behavior. Moreover, owing to the spatial confinement for MILC fronts, small cross-section of the NW channel would result in little lateral crystallization, and thus retarding the enhancement in performance of MILC NW devices. (c) 2012 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2012.05.025
http://hdl.handle.net/11536/20674
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.05.025
期刊: SOLID-STATE ELECTRONICS
Volume: 77
Issue: 
起始頁: 20
結束頁: 25
顯示於類別:期刊論文


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  1. 000309318900005.pdf