標題: EFFECT OF PHONON-SCATTERING ON FREE-CARRIER ABSORPTION IN N-TYPE INDIUM-ANTIMONIDE FILMS
作者: WU, CC
LIN, CJ
應用數學系
電控工程研究所
Department of Applied Mathematics
Institute of Electrical and Control Engineering
公開日期: 1-二月-1995
摘要: The free-carrier absorption in n-type InSb films has been investigated for carriers confined in quasi-two-dimensional (2D) semiconductors with the nonparabolic energy band of electrons. We discuss the effect of phonon scattering on the free-carrier absorption coefficient (alpha) for both deformation-potential coupling and piezoelectric coupling. alpha is found to depend on the photon polarization relative to the direction normal to the quasi-2D structure, the photon frequency, the film thickness, and the temperature. alpha could be complex due to the interaction between photons, phonons, and electrons. (i) When the acoustic phonon scattering is dominant, alpha increases with decreasing the film thickness for phonons polarized parallel or perpendicular to the layer plane. It is also shown that alpha increases with decreasing photon frequency and increasing temperature for photons polarized parallel to the layer plane, while for photons polarized perpendicular to the layer plane the alpha temperature-dependence is more complicated. (ii) If the piezoelectric scattering is dominant, alpha is also decreasing with increasing the film thickness for photons polarized parallel or perpendicular to the layer plane. But alpha decreases with increasing temperature for photons polarized perpendicular to the layer plane. Moreover, numerical results for the parallel polarization are much smaller than those for the perpendicular polarization.
URI: http://hdl.handle.net/11536/2067
ISSN: 0921-4526
期刊: PHYSICA B
Volume: 205
Issue: 2
起始頁: 183
結束頁: 192
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QK32800007.pdf