Title: Infrared proximity sensor using organic light-emitting diode with quantum dots converter
Authors: Chen, En-Chen
Yeh, Han-Cheng
Chao, Yu-Chiang
Meng, Hsin-Fei
Zan, Hsiao-Wen
Liang, Yun-Chi
Huang, Chin-Ping
Chen, Teng-Ming
Wang, Chih-Feng
Chueh, Chu-Chen
Chen, Wen-Chang
Horng, Sheng-Fu
Department of Applied Chemistry
Institute of Physics
Department of Photonics
Keywords: Quantum dots;PLED;Infrared proximity sensor
Issue Date: 1-Nov-2012
Abstract: An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2,3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all I cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2012.05.010
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2012.05.010
Volume: 13
Issue: 11
Begin Page: 2312
End Page: 2318
Appears in Collections:Articles

Files in This Item:

  1. 000311177700014.pdf