標題: Domain Wall Geometry Controls Conduction in Ferroelectrics
作者: Vasudevan, R. K.
Morozovska, A. N.
Eliseev, E. A.
Britson, J.
Yang, J. -C.
Chu, Y. -H.
Maksymovych, P.
Chen, L. Q.
Nagarajan, V.
Kalinin, S. V.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Domain wall conduction;PFM;phase-field modeling;c-AFM;ferroelectrics
公開日期: 1-Nov-2012
摘要: A new paradigm of domain wall. nanoelectronics has emerged recently, in which the domain wall in a ferroic is itself an active device element The ability to spatially. modulate the ferroic order parameter within a single domain wall allows the physical properties to be tailored at will and hence opens vastly unexplored device possibilities: Here, we demonstrate via ambient and ultrahigh-vacuum (UHV) scanning probe microscopy (SPM) measurements in bismuth ferrite that the conductivity of the domain walls can be modulated by up to 500% in the spatial dimension as a function of domain wall curvature. Landau-Ginzburg-Devonshire calculations reveal the conduction is a.. result of carriers or vacancies migrating to neutralize the charge at the farmed interface. Phase field modeling indicates that anisotropic potential distributions can occur even for initially uncharged walls, from polarization dynamics mediated by elastic effects. These results are the first proof of concept for modulation of charge as a function of domain wall geometry by a proximal probe, thereby expanding potential applications for oxide ferroics in future nanoscale electronics.
URI: http://dx.doi.org/10.1021/nl302382k
http://hdl.handle.net/11536/20650
ISSN: 1530-6984
DOI: 10.1021/nl302382k
期刊: NANO LETTERS
Volume: 12
Issue: 11
起始頁: 5524
結束頁: 5531
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