Title: Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHz
Authors: Fatah, Faiz
Kuo, Chien-I
Hsu, Heng-Tung
Chiang, Che-Yang
Hsu, Ching-Yi
Miyamoto, Yasuyuki
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Nov-2012
Abstract: In this paper, we present the fabrication and characterization of 40 nm InAs-channel high-electron-mobility-transistor (HEMT) devices. Both DC and RF measurements were performed under various bias conditions. We have also extracted bias-dependent intrinsic device parameters to determine the optimum conditions of operation. It is concluded that a high current-gain cutoff frequency (f(T)) of 615 GHz can be achieved when the device is biased near the occurrence of impact ionization. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.51.110203
http://hdl.handle.net/11536/20646
ISSN: 0021-4922
DOI: 10.1143/JJAP.51.110203
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 11
End Page: 
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