標題: UV ozone treatment for improving contact resistance on graphene
作者: Chen, Chung Wei
Ren, Fan
Chi, Gou-Chung
Hung, Sheng-Chun
Huang, Y. P.
Kim, Jihyun
Kravchenko, Ivan I.
Pearton, Stephen J.
光電工程學系
Department of Photonics
公開日期: 1-十一月-2012
摘要: Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 x 10(-6) Omega-cm(2)) compared to untreated surfaces (4 x 10(-3) Omega-cm(2)). Subsequent annealing at 300 degrees C lowers the minimum value achieved to 7 x 10(-7) Omega-cm(2). Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4754566]
URI: http://dx.doi.org/10.1116/1.4754566
http://hdl.handle.net/11536/20637
ISSN: 1071-1023
DOI: 10.1116/1.4754566
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 30
Issue: 6
結束頁: 
顯示於類別:期刊論文


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