標題: A 1.2-V 5.2-mW 20-30-GHz Wideband Receiver Front-End in 0.18-mu m CMOS
作者: Li, Chun-Hsing
Kuo, Chien-Nan
Kuo, Ming-Ching
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS;common-gate (CG) low-noise amplifier (LNA);inductively coupled resonators (ICRs);low power;low voltage;mixer;resonator coupling network (RCN);wideband
公開日期: 1-十一月-2012
摘要: This paper presents a low-power wideband receiver front-end design using a resonator coupling technique. Inductively coupled resonators, composed of an on-chip transformer and parasitic capacitances from a low-noise amplifier, a mixer, and the transformer itself, not only provide wideband signal transfer, but also realize wideband high-to-low impedance transformation. The coupled resonators also function as a wideband balun to give single-to-differential conversion. Analytic expressions for the coupled resonators with asymmetric loads are presented for design guidelines. The proposed receiver front-end only needs a few passive components so that gain degradation caused by the passive loss is minimized. Hence, power consumption and chip area can be greatly reduced. The chip is implemented in 0.18-mu m CMOS technology. The experimental result shows that the -3-dB bandwidth can span from 20 to 30 GHz with a peak conversion gain of 18.7 dB. The measured input return loss and third-order intercept point are better than 16.7 dB and -7.6 dBm, respectively, over the bandwidth. The minimum noise figure is 7.1 dB. The power consumption is only 5.2 mW from a 1.2-V supply. The chip area is only 0.18 mm(2).
URI: http://dx.doi.org/10.1109/TMTT.2012.2216285
http://hdl.handle.net/11536/20632
ISSN: 0018-9480
DOI: 10.1109/TMTT.2012.2216285
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 60
Issue: 11
起始頁: 3502
結束頁: 3512
顯示於類別:期刊論文


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  1. 000310969100019.pdf