標題: Polymer infrared photo-detector with high sensitivity up to 1100 nm
作者: Chen, En-Chen
Tseng, Shin-Rong
Chao, Yu-Chiang
Meng, Hsin-Fei
Wang, Chih-Feng
Chen, Wen-Chang
Hsu, Chian-Shu
Horng, Sheng-Fu
應用化學系
物理研究所
Department of Applied Chemistry
Institute of Physics
關鍵字: Polymer;Photo-detector;Low band-gap;Near infrared
公開日期: 1-Aug-2011
摘要: We reported a low band-gap conjugated polymer, poly[2,3-bis(4-(2-ethylhexyloxy)phenyl)-5,7-di(thiophen-2-yl)thienol[3,4-b]pyrazine] (PDTTP), was studied for the near infrared (NIR) photo-detector application. PDTTP shows intense absorption in NIR wavelength (to 1000 nm) and the estimated optical and electrochemical band-gaps of PDTTP are quite small around 1.15 eV and 1.08 eV, respectively. The low band-gap and the extended long wavelength absorption originates from the introduction of alternating TP units when its parent polythieno[3,4-b]pyrazine shows excellent narrow band-gap properties. Therefore, the relatively low band-gap and intense absorption in long wavelength of PDTTP make itself a promising candidate for near-infrared photo-detector. The hole mobility of the PDTTP measured from the bottom contact field effect transistor is around 1.40 x 10(-3) cm(2)/V s with a on/off ratio of 2100. The photo-detector based on bulk hetero-junction PDTTP and (6,6)-phenyl-C61-butyric acid methyl ester blend (PCBM) has the incident photon-to-electron conversion efficiency 28.9% at 1000 nm (-5 V) and 6.2% at 1100 nm (-5 V). This photo-detector can be operated at a high-speed of 1 MHz. The experimental result suggests the potential applications of low band-gap conjugated polymers on near-infrared photo-detectors. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.synthmet.2011.05.027
http://hdl.handle.net/11536/20616
ISSN: 0379-6779
DOI: 10.1016/j.synthmet.2011.05.027
期刊: SYNTHETIC METALS
Volume: 161
Issue: 15-16
起始頁: 1618
結束頁: 1622
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