標題: VERY-LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SI FILMS FABRICATED BY HYDROGEN DILUTION WITH ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION
作者: WANG, KC
CHENG, KL
JIANG, YL
YEW, TR
HWANG, HL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HYDROGEN DILUTION;ECR-CVD;AFM;TEM;RAMAN SPECTRA;CRYSTALLINE FRACTION;X-RAY DIFFRACTION PATTERN
公開日期: 1-Feb-1995
摘要: Characteristics of polycrystalline silicon films deposited both on SiO2 and Coming 7059 glass substrates are presented in this paper. The silicon films were deposited by a hydrogen dilution method using electron cyclotron resonance chemical vapor deposition at 250 degrees C without any thermal or laser annealing. The hydrogen dilution ratio was between 90% and 99%. The geometric configuration and surface morphology of polycrystalline silicon films were studied by atomic force microscopy. The largest grain size of the deposited silicon films; identified by plan-view transmission electron microscopy dark-field imaging, was about 1 mu m. From Raman spectrum, the crystalline fraction of polycrystalline silicon films was identified to be nearly 100%. The polycrystalline silicon was found to be preferentially [111]- and [110]-oriented, from the X-ray diffraction pattern.
URI: http://dx.doi.org/10.1143/JJAP.34.927
http://hdl.handle.net/11536/2061
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.927
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 2B
起始頁: 927
結束頁: 931
Appears in Collections:Conferences Paper


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  1. A1995RF65900051.pdf