標題: Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs
作者: Tai, Y. -H.
Chiu, H. -L.
Chou, L. -S.
Chang, C. -H.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Differential amplifier circuit;dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT)
公開日期: 1-十二月-2012
摘要: A dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT) has two gate electrodes. The primary gate electrode is at the bottom, and the other is on the top. The drain current of the TFT can be controlled by both the bottom and top gates. This phenomenon provides great flexibility for the circuit design. In this letter, we propose the differential amplifier circuit using the top gate of the dual-gate a-IGZO TFT as an input for positive feedback to boost the gain. It is experimentally verified that the gain of the differential amplifier circuit is increased three times larger than those without the feedback loop.
URI: http://dx.doi.org/10.1109/LED.2012.2220955
http://hdl.handle.net/11536/20590
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2220955
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 12
起始頁: 1729
結束頁: 1731
顯示於類別:期刊論文


文件中的檔案:

  1. 000311808300019.pdf