標題: Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
作者: Tsai, Tsung-Ming
Chang, Kuan-Chang
Chang, Ting-Chang
Syu, Yong-En
Chuang, Siang-Lan
Chang, Geng-Wei
Liu, Guan-Ru
Chen, Min-Chen
Huang, Hui-Chun
Liu, Shih-Kun
Tai, Ya-Hsiang
Gan, Der-Shin
Yang, Ya-Liang
Young, Tai-Fa
Tseng, Bae-Heng
Chen, Kai-Huang
Tsai, Ming-Jinn
Ye, Cong
Wang, Hao
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Nonvolatile memory (NVM);nickel;resistive switching;silicon oxide
公開日期: 1-十二月-2012
摘要: In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the silicon oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.
URI: http://dx.doi.org/10.1109/LED.2012.2217933
http://hdl.handle.net/11536/20589
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2217933
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 12
起始頁: 1696
結束頁: 1698
顯示於類別:期刊論文


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