|標題:||Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
|關鍵字:||Nonvolatile memory (NVM);nickel;resistive switching;silicon oxide|
|摘要:||In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the silicon oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.|
|期刊:||IEEE ELECTRON DEVICE LETTERS|