標題: Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
作者: Tsai, Tsung-Ming
Chang, Kuan-Chang
Chang, Ting-Chang
Chang, Geng-Wei
Syu, Yong-En
Su, Yu-Ting
Liu, Guan-Ru
Liao, Kuo-Hsiao
Chen, Min-Chen
Huang, Hui-Chun
Tai, Ya-Hsiang
Gan, Der-Shin
Ye, Cong
Wang, Hao
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Hopping conduction;hydration-dehydration reaction;resistance random access memory (RRAM);supercritical fluid
公開日期: 1-十二月-2012
摘要: In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide (Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the Sn:SiOx thin film by hydration-dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses.
URI: http://dx.doi.org/10.1109/LED.2012.2217932
http://hdl.handle.net/11536/20588
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2217932
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 12
起始頁: 1693
結束頁: 1695
顯示於類別:期刊論文


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