Title: Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates
Authors: Hsieh, Cheng-Yu
Lin, Bo-Wen
Cho, Hsin-Ju
Wang, Bau-Ming
Chang, Nancy
Wu, Yew-Chung Sermon
Department of Materials Science and Engineering
Keywords: Light-emitting diode (LED);nano pattern;sapphire
Issue Date: 15-Dec-2012
Abstract: A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.
URI: http://dx.doi.org/10.1109/LPT.2012.2224855
ISSN: 1041-1135
DOI: 10.1109/LPT.2012.2224855
Volume: 24
Issue: 24
Begin Page: 2232
End Page: 2234
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