標題: Optical characterizations and reverse-bias electroluminescence observation for reliability investigations of the InGaN light emitting diode
作者: Chen, Hsiang
Yeh, Yih-Min
Liao, Chuan Hao
Lin, Chun Wei
Kao, Chuan-Haur
Lu, Tien-Chang
交大名義發表
National Chiao Tung University
關鍵字: Optical characterization;GaN LED;Electroluminescence;Reverse bias;Leakage current;Hot electron
公開日期: 1-一月-2013
摘要: The reverse-bias operation of the InGaN light-emitting diode (LED) device can reveal device-reliability problems. This study uses optical characterization techniques, including surface temperature measurements, two-dimensional (2D) X-ray fluorescent (XRF) element analysis, 2D electroluminescence (EL) images processed by Matlab, and electrical measurements to visualize the current leakages around the metal contact of the device. Connections between the device performance and the reverse-bias EL current distribution have been established. This paper attributes the origin of the reverse-bias emission to a high electric field caused by weak structures during process variations. Hot electron-induced emissions due to a leakage current may be a mechanism of the reverse-bias emission. Furthermore, reverse-bias stress on the devices is performed on the LED devices to investigate reliability issues. The reverse-bias light emission is relevant to reliability problems because of its combination of optical characterization and electrical performance. These techniques provide a screening tool that will correlate device failures with the fabrication process for future industrial applications. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2012.08.017
http://hdl.handle.net/11536/20576
ISSN: 0167-9317
DOI: 10.1016/j.mee.2012.08.017
期刊: MICROELECTRONIC ENGINEERING
Volume: 101
Issue: 
起始頁: 42
結束頁: 46
顯示於類別:期刊論文


文件中的檔案:

  1. 000311131100008.pdf