Title: Environmentally Stable Flexible Metal-Insulator-Metal Capacitors Using Zirconium-Silicate and Hafnium-Silicate Thin Film Composite Materials as Gate Dielectrics
Authors: Meena, Jagan Singh
Chu, Min-Ching
Wu, Chung-Shu
Ravipati, Srikanth
Ko, Fu-Hsiang
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Keywords: Flexible Substrate;MIM Capacitor;Sol-Gel Spins Coating;Hafnium-Silicate;Zirconium-Silicate
Issue Date: 1-Aug-2011
Abstract: Fully flexible metal-insulator-metal (MIM) capacitors fabricated on 25 mu m thin polyimide (PI) substrates via the surface sol gel process using 10-nm-thick zirconium-silicate (ZrSi(x)O(y)) and hafnium-silicate (HfSi(m)O(n)) films as gate dielectrics. The surface morphology of the ZrSi(x)O(y) and HfSi(m)O(n) films were investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free surface growth had occurred on the PI. Both the films treated with oxygen (O(2)) plasma and annealing (ca. 250 degrees C) consisted of amorphous phase; confirmed by X-ray diffraction. We employed X-ray photoelectron spectroscopy (XPS) at high resolution to examine the chemical composition of the films subjected to various treatment conditions. The shift of the XPS peaks towards higher binding energy revealed the O(2) plasma-pretreatment followed by annealing was the most effective process to the surface oxidation at relatively low-temperature, for further passivate the grease traps and making dielectric films thermally stable. The ZrSi(x)O(y) and HfSi(m)O(n) films in sandwich-like MIM configuration on the PI substrates exhibited the low leakage current densities of 7.1 x 10(-9) and 8.4 x 10(-9) A/cm(2) at applied electric field of 10 MV/cm and maximum capacitance densities of 7.5 and 5.3 fF/mu m(2) at 1 MHz, respectively. In addition, the ZrSi(x)O(y) and HfSi(m)O(n), films in MIM capacitors showed the estimated dielectric constants of 8.2 and 6.0, respectively. Prior to use of flexible MIM capacitors in advanced flexible electronic devices; the reliability test was studied by applying day-dependent leakage current density measurements up to 30 days. These films of silicate-surfactant mesostructured materials have special interest to be used as gate dielectrics in future for flexible metal-oxide-semiconductor devices.
URI: http://dx.doi.org/10.1166/jnn.2011.4247
ISSN: 1533-4880
DOI: 10.1166/jnn.2011.4247
Volume: 11
Issue: 8
Begin Page: 6858
End Page: 6867
Appears in Collections:Articles