標題: High field emission efficiency surface conduction electron emitters
作者: Li, Yiming
Chao, Hsueh-Yung
Lo, Hsiang-Yu
電信工程研究所
Institute of Communications Engineering
關鍵字: Surface conduction electron-emitter;Hydrogen embrittlement;Focused ion beam;Finite-difference time-domain particle-in-cell method;Current-voltage characteristic;Electric fields;Electron trajectories
公開日期: 1-九月-2008
摘要: Two different surface conduction electron-emitter (SCE) structures with the nanogap of 90 nm wide fabricated by hydrogen embrittlement (HE) and focused ion beam techniques are simulated for the first time. We employ a three-dimensional particle-in-cell method coupling with finite-difference time-domain scheme to simulate the property of electron emission in these SCEs. Our calibrated simulation predicts high emission efficiency of the SCE structure which is fabricated by HE. Compared with the other SCE structure, it is observed that the proposed structure possesses low power consumption at the fixed emission current when the width of nanogap becomes narrower. The current-voltage characteristics including conducting mechanisms are investigated and explained.
URI: http://dx.doi.org/10.1007/s10825-007-0168-0
http://hdl.handle.net/11536/20526
ISSN: 1569-8025
DOI: 10.1007/s10825-007-0168-0
期刊: JOURNAL OF COMPUTATIONAL ELECTRONICS
Volume: 7
Issue: 3
起始頁: 440
結束頁: 444
顯示於類別:期刊論文


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  1. 000208473800081.pdf