標題: Temperature dependence on the contact size of GeSbTe films for phase change memories
作者: Li, Yiming
Yu, Shao-Ming
Hwang, Chih-Hong
Kuo, Yi-Ting
資訊工程學系
電信工程研究所
Department of Computer Science
Institute of Communications Engineering
關鍵字: Phase change memories;GeSbTe material;Geometry effects;Temperature;Numerical simulation
公開日期: 1-九月-2008
摘要: In this study, a three-dimensional electro-thermal time-domain simulation is developed for dynamic thermal analysis of Phase change memories (PCMs). The geometry effects of the GeSbTe (GST) materials and the TiN heater are explored through a series of numerical examinations. It is found that the contact size of the GST significantly alters the maximum temperature of the PCMs, compared with the height of the GST films. The heater's aspect ratio also dominates the maximum temperature of the GST material, and the effect of the heater's thickness on the temperature is more evident than its height. One conformal bi-layer GST structure with different electric and thermal conductivities on the GST layers is examined for different applied currents to extract the curve of resistances versus applied currents.
URI: http://dx.doi.org/10.1007/s10825-008-0192-8
http://hdl.handle.net/11536/20524
ISSN: 1569-8025
DOI: 10.1007/s10825-008-0192-8
期刊: JOURNAL OF COMPUTATIONAL ELECTRONICS
Volume: 7
Issue: 3
起始頁: 138
結束頁: 141
顯示於類別:期刊論文


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  1. 000208473800011.pdf