標題: A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors
作者: Li, Yiming
Yu, Shao-Ming
資訊工程學系
電信工程研究所
友訊交大聯合研發中心
Department of Computer Science
Institute of Communications Engineering
D Link NCTU Joint Res Ctr
關鍵字: LTPS TFT;compact model;RPI V1 and V2 models;parameter extraction technique;optimization
公開日期: 1-十月-2004
摘要: A unified physical-based model parameter extraction technique for excimer laser annealed lower temperature polycrystalline silicon (LTPS) complementary thin film transistors (TFTs) is for the first time proposed. For two well-known compact models of LTPS TFT, Rensselaer Polytechnic Institute (RPI) V1 and V2 models, our approach sequentially optimizes the model parameters in the regions of linear, subthreshold, saturation, and leakage. Compared with the measured results, the extracted I-D - V-G, I-D - V-D, transconductance, and output conductance are within 3% of accuracy. The agreement with the experimental data is excellent for the n- and p-type LTPS TFTs with different length and width. This extraction technique bridges the fabrication of LTPS TFTs and the design of complementary system on panel circuits.
URI: http://dx.doi.org/10.1007/s10825-004-7057-6
http://hdl.handle.net/11536/20514
ISSN: 1569-8025
DOI: 10.1007/s10825-004-7057-6
期刊: JOURNAL OF COMPUTATIONAL ELECTRONICS
Volume: 3
Issue: 3-4
起始頁: 257
結束頁: 261
顯示於類別:期刊論文


文件中的檔案:

  1. 000208478600024.pdf