標題: Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization
作者: Lin, Yu-Chuan
Zhang, Wenjing
Huang, Jing-Kai
Liu, Keng-Ku
Lee, Yi-Hsien
Liang, Chi-Te
Chu, Chih-Wei
Li, Lain-Jong
光電工程學系
Department of Photonics
公開日期: 2012
摘要: Atomically thin molybdenum disulfide (MoS2) layers have attracted great interest due to their direct-gap property and potential applications in optoelectronics and energy harvesting. Meanwhile, they are extremely bendable, promising for applications in flexible electronics. However, the synthetic approach to obtain large-area MoS2 atomic thin layers is still lacking. Here we report that wafer-scale MoS2 thin layers can be obtained using MoO3 thin films as a starting material followed by a two-step thermal process, reduction of MoO3 at 500 degrees C in hydrogen and sulfurization at 1000 degrees C in the presence of sulfur. Spectroscopic, optical and electrical characterizations reveal that these films are polycrystalline and with semiconductor properties. The obtained MoS2 films are uniform in thickness and easily transferable to arbitrary substrates, which make such films suitable for flexible electronics or optoelectronics.
URI: http://hdl.handle.net/11536/20505
http://dx.doi.org/10.1039/c2nr31833d
ISSN: 2040-3364
DOI: 10.1039/c2nr31833d
期刊: NANOSCALE
Volume: 4
Issue: 20
起始頁: 6637
結束頁: 6641
顯示於類別:期刊論文


文件中的檔案:

  1. 000310976800067.pdf