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dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorLin, B. H.en_US
dc.contributor.authorKuo, C. C.en_US
dc.contributor.authorLee, W. C.en_US
dc.contributor.authorHong, M.en_US
dc.contributor.authorKwo, J.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.date.accessioned2014-12-08T15:28:21Z-
dc.date.available2014-12-08T15:28:21Z-
dc.date.issued2012en_US
dc.identifier.issn1466-8033en_US
dc.identifier.urihttp://hdl.handle.net/11536/20500-
dc.identifier.urihttp://dx.doi.org/10.1039/c2ce26074cen_US
dc.description.abstractThe evolution of the strain state as a function of layer thickness of (0001) oriented ZnO epitaxial films grown by pulsed-laser deposition on Si (111) substrates with a thin oxide Y2O3 buffer layer was investigated by high resolution X-ray diffraction (XRD). The ZnO layers experience a tensile strain, which gradually diminishes with increasing layer thickness. Regions with a nearly strain-free lattice develop as the layer thickness exceeds a critical value and are correlated with the emergence of the < 11 (2) over bar0 > oriented crack channels. The influence of the biaxial strain to the vibrational and optical properties of the ZnO layers were also studied by micro-Raman, optical reflectance, and photoluminescence. The deformation-potential parameters, a(lambda) and b(lambda), of the E-2(high) phonon mode are determined to be -740.8 +/- 8.4 and -818.5 +/- 14.8 cm(-1), respectively. The excitonic transitions associated with the FXA, FXB, and D degrees X-A emissions and the A-exciton binding energy all show linear dependence on the in-plane strain with a negative slope.en_US
dc.language.isoen_USen_US
dc.titleThickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)en_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c2ce26074cen_US
dc.identifier.journalCRYSTENGCOMMen_US
dc.citation.volume14en_US
dc.citation.issue23en_US
dc.citation.spage8103en_US
dc.citation.epage8109en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000310467600044-
dc.citation.woscount1-
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