標題: The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy
作者: Hsieh, LZ
Huang, JH
Su, ZA
Guo, XJ
Shih, HC
Wu, MCY
電子物理學系
Department of Electrophysics
關鍵字: As precipitates;low-temperature molecular beam epitaxy;transmission electron microscopy
公開日期: 1-十一月-1997
摘要: The structure relationship of the As precipitates found in post-annealed Si delta-doped GaAs layers grown by low-temperature molecular beam epitaxy is elucidated by transmission electron microscopy (TEM). There are six extra spots around the diffraction pattern of GaAs for a sample annealed at 700 degrees C. The As precipitates and GaAs matrix are found to be semicoherent with the hexagonal [-1-21](As) parallel to the cubic [110](GaAs). Because of the different lattice constants and Bravias lattices between GaAs and As precipitates, these extra spots are formed by double-diffraction effects. The high-resolution TEM images show two types of Moire fringes. One is the parallel Moire pattern and the other is the rotation Moire pattern. The relative positions of the extra spots in the diffraction pattern correspond to the orientation and spacing of Moire fringes.
URI: http://hdl.handle.net/11536/205
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 11
起始頁: 6614
結束頁: 6619
顯示於類別:期刊論文


文件中的檔案:

  1. 000071172300006.pdf