標題: ENERGY-DEPENDENCE OF THE ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN UNDOPED A-SI-H FILMS
作者: CHEN, YE
WANG, FS
TSAI, JW
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: UNDOPED A-SI-H;ENERGY DEPENDENCE OF ELECTRON-CAPTURE CROSS SECTION
公開日期: 15-二月-1995
摘要: Isothermal capacitance transient spectroscopy (ICTS) has been employed to measure the energy dependence of the electron-capture cross section of continuously distributed defect levels in undoped a-Si:H film for the first time, via the proposed novel structure. For undoped a-Si:H films! experimental results show that the electron-capture cross section of defect levels initially decreases exponentially, reaches a minimum, and then increases exponentially with energy depth measured from the mobility edge of the conduction band. This v-shaped distribution of the electron-capture cross section of continuously distributed defect levels in undoped a-Si:H film is different from that in phosphorous-doped a-Si:H film. This means that mechanisms other than multiphonon emission can be dominant in the electron-capture process in the gap states in undoped a-Si:H film.
URI: http://dx.doi.org/10.1143/JJAP.34.L268
http://hdl.handle.net/11536/2048
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.L268
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 34
Issue: 2B
起始頁: L268
結束頁: L270
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RD77800020.pdf