標題: Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode
作者: Xuan, Rong
Kuo, Wei-Hong
Hu, Chih-Wei
Lin, Suh-Fang
Chen, Jenn-Fang
電子物理學系
Department of Electrophysics
公開日期: 10-九月-2012
摘要: This paper presents an approach in fabricating normally off AlGaN/GaN high electron mobility transistors (HEMTs). The fabrication technique was based on the carbon-doped GaN epitaxy layers on silicon substrate and the nano rod structure of the gate region in AlGaN/GaN HEMTs. Using this method, the threshold voltage of AlGaN/GaN HEMTs can be shifted from -2 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 2 V in an enhancement-mode (E-mode) AlGaN/GaN HEMT. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752113]
URI: http://dx.doi.org/10.1063/1.4752113
http://hdl.handle.net/11536/20479
ISSN: 0003-6951
DOI: 10.1063/1.4752113
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 11
結束頁: 
顯示於類別:期刊論文


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  1. 000309329300038.pdf