標題: Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
作者: Tsai, Tsung-Ming
Chang, Kuan-Chang
Chang, Ting-Chang
Syu, Yong-En
Liao, Kuo-Hsiao
Tseng, Bae-Heng
Sze, Simon M.
電子工程學系及電子研究所
腦科學研究中心
Department of Electronics Engineering and Institute of Electronics
Brain Research Center
公開日期: 10-九月-2012
摘要: The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiOx) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiOx film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750235]
URI: http://dx.doi.org/10.1063/1.4750235
http://hdl.handle.net/11536/20478
ISSN: 0003-6951
DOI: 10.1063/1.4750235
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 11
結束頁: 
顯示於類別:期刊論文


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