標題: Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
作者: Teng, Li-Feng
Liu, Po-Tsun
Lo, Yuan-Jou
Lee, Yao-Jen
光電學院
光電工程學系
顯示科技研究所
College of Photonics
Department of Photonics
Institute of Display
公開日期: 24-九月-2012
摘要: By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5 cm(2)/Vs, threshold voltage of 3.28 V, and subthreshold swing of 0.43 V/decade. This TFT performance with microwave annealing of 100 s is well competitive with its counterpart with furnace annealing at 450 degrees C for 1 h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754627]
URI: http://dx.doi.org/10.1063/1.4754627
http://hdl.handle.net/11536/20476
ISSN: 0003-6951
DOI: 10.1063/1.4754627
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 13
結束頁: 
顯示於類別:期刊論文


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  1. 000309426800059.pdf