標題: Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors
作者: Lo, Wen-Hung
Chang, Ting-Chang
Tsai, Jyun-Yu
Dai, Chih-Hao
Chen, Ching-En
Ho, Szu-Han
Chen, Hua-Mao
Cheng, Osbert
Huang, Cheng-Tung
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 24-九月-2012
摘要: This Letter studies positive bias stress-induced abnormal interface state on TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors. It can be found that the degradation is associated with electron trapping, resulting in V-th shift but without subthreshold slope degradation. However, charge pumping current (I-CP) shows a significant degradation after stress. Accordingly, the impact ionization-induced Nit located HfO2/SiO2 is proposed to demonstrate the ICP degradation. The AC stress with several frequencies is used to evidence the occurrence of impact ionization. Further, the device with additional pre-existing N-it located SiO2/Si has insignificant degradation due to reduction in stress electric field. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752456]
URI: http://dx.doi.org/10.1063/1.4752456
http://hdl.handle.net/11536/20475
ISSN: 0003-6951
DOI: 10.1063/1.4752456
期刊: APPLIED PHYSICS LETTERS
Volume: 101
Issue: 13
結束頁: 
顯示於類別:期刊論文


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  1. 000309426800087.pdf