標題: Fabrication and Characterization of (111)-Oriented and Nanotwinned Cu by Dc Electrodeposition
作者: Liu, Tao-Chi
Liu, Chien-Min
Hsiao, Hsiang-Yao
Lu, Jia-Ling
Huang, Yi-Sa
Chen, Chih
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-十月-2012
摘要: We report an approach to fabricating (111)-oriented and nanotwinned Cu (nt-Cu) by dc electroplating. A 200 nm thick Cu with (111) preferred orientation is required as a seed layer. Highly oriented Cu films with densely packed nanotwins can be grown to exceed 20 mu m thick at high current and high stirring speeds. X-ray diffraction indicates that the intensity ratio of (111) to (220) is as high as 506, which is the highest among the reported electroplated Cu films. The spacing of twins ranges from 10 to 100 nm, which reveals a high hardness value of 2.23 GPa. The (111)-oriented nt-Cu will have many potential applications in interconnects and 3D IC packaging.
URI: http://dx.doi.org/10.1021/cg300962v
http://hdl.handle.net/11536/20465
ISSN: 1528-7483
DOI: 10.1021/cg300962v
期刊: CRYSTAL GROWTH & DESIGN
Volume: 12
Issue: 10
起始頁: 5012
結束頁: 5016
顯示於類別:期刊論文


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  1. 000309493300044.pdf