標題: Improvement of Crystalline and Photoluminescence of Atomic Layer Deposited m-Plane ZnO Epitaxial Films by Annealing Treatment
作者: Yang, S.
Lin, B. H.
Kuo, C. C.
Hsu, H. C.
Liu, W-R
Eriksson, M. O.
Holtz, P-O
Chang, C-S
Hsu, C-H
Hsieh, W. F.
生物科技學系
光電工程學系
Department of Biological Science and Technology
Department of Photonics
公開日期: 1-十月-2012
摘要: Monocrystalline m-plane ZnO epitaxial films with flat surface morphology were grown on m-plane sapphire by using atomic layer deposition. X-ray diffraction and transmission electron microscopy measurements verify not only the in-plane epitaxial relationship of the as-grown films as (10 (1) over bar0)< 0001 >(ZnO)parallel to(10 (1) over bar0)<(1) over bar2 (1) over bar0 > Al2O3 but also the absence of domains with undesirable orientations, which are generally obtained in the m-plane ZnO films grown by other methods. Experimental results indicate that the basal plane stacking fault (BSF) is the dominant structural defects that contribute to the emission at 3.31 eV in m-plane ZnO films. Exactly how thermal annealing affects the structural and optical properties of ZnO epi-films was also investigated. Additionally, based on time-resolved photoluminescence at 5 K, the decay time of BSF related emission and near-band-edge (NBE) emission were determined. Results of this work further demonstrated that the decay time of NBE emission increases with a higher annealing temperature, accompanied by an improvement in crystal structure.
URI: http://dx.doi.org/10.1021/cg300376r
http://hdl.handle.net/11536/20464
ISSN: 1528-7483
DOI: 10.1021/cg300376r
期刊: CRYSTAL GROWTH & DESIGN
Volume: 12
Issue: 10
起始頁: 4745
結束頁: 4751
顯示於類別:期刊論文


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