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dc.contributor.authorLin, B. H.en_US
dc.contributor.authorLiu, W. -Ren_US
dc.contributor.authorLin, C. Y.en_US
dc.contributor.authorHsu, S. T.en_US
dc.contributor.authorYang, S.en_US
dc.contributor.authorKuo, C. C.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorChien, F. S. -S.en_US
dc.contributor.authorChang, C. S.en_US
dc.date.accessioned2014-12-08T15:28:13Z-
dc.date.available2014-12-08T15:28:13Z-
dc.date.issued2012-10-01en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/am301271ken_US
dc.identifier.urihttp://hdl.handle.net/11536/20434-
dc.description.abstractHigh-quality m-plane orientated ZnO films have been successfully grown on m-plane sapphire by using radio frequency magnetron sputtering deposition. The introduction of a nanometer-thick, low-temperature-grown ZnO buffer layer effectively eliminates inclusions of other undesirable orientations. The structure characteristics of the ZnO epi-layers were thoroughly studied by synchrotron X-ray scattering and transmission electron microscopy (TEM). The in-plane epitaxial relationship between ZnO and sapphire follows (0002)(ZnO) parallel to (11 (2) over bar0)(sapphire) and (11 (2) over bar0)(ZnO) parallel to (0006)(sapphire) and the ZnO/sapphire interface structure can be described by the domain matching epitaxy along the [11 (2) over bar0](ZnO) direction. The vibrational properties of the films were investigated by polarization dependent micro-Raman spectroscopy. Both XRD and micro-Raman results reveal that the obtained m-ZnO layers are tinder an anisotropic biaxial strain but still retains a hexagonal lattice.en_US
dc.language.isoen_USen_US
dc.titleSingle Domain m-Plane ZnO Grown on m-Plane Sapphire by Radio Frequency Magnetron Sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/am301271ken_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume4en_US
dc.citation.issue10en_US
dc.citation.spage5333en_US
dc.citation.epage5337en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000310109000039-
dc.citation.woscount3-
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