標題: Single Domain m-Plane ZnO Grown on m-Plane Sapphire by Radio Frequency Magnetron Sputtering
作者: Lin, B. H.
Liu, W. -R
Lin, C. Y.
Hsu, S. T.
Yang, S.
Kuo, C. C.
Hsu, C. -H.
Hsieh, W. F.
Chien, F. S. -S.
Chang, C. S.
光電工程學系
Department of Photonics
公開日期: 1-Oct-2012
摘要: High-quality m-plane orientated ZnO films have been successfully grown on m-plane sapphire by using radio frequency magnetron sputtering deposition. The introduction of a nanometer-thick, low-temperature-grown ZnO buffer layer effectively eliminates inclusions of other undesirable orientations. The structure characteristics of the ZnO epi-layers were thoroughly studied by synchrotron X-ray scattering and transmission electron microscopy (TEM). The in-plane epitaxial relationship between ZnO and sapphire follows (0002)(ZnO) parallel to (11 (2) over bar0)(sapphire) and (11 (2) over bar0)(ZnO) parallel to (0006)(sapphire) and the ZnO/sapphire interface structure can be described by the domain matching epitaxy along the [11 (2) over bar0](ZnO) direction. The vibrational properties of the films were investigated by polarization dependent micro-Raman spectroscopy. Both XRD and micro-Raman results reveal that the obtained m-ZnO layers are tinder an anisotropic biaxial strain but still retains a hexagonal lattice.
URI: http://dx.doi.org/10.1021/am301271k
http://hdl.handle.net/11536/20434
ISSN: 1944-8244
DOI: 10.1021/am301271k
期刊: ACS APPLIED MATERIALS & INTERFACES
Volume: 4
Issue: 10
起始頁: 5333
結束頁: 5337
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