標題: Low-Operating-Voltage Ultrathin Junctionless Poly-Si Thin-Film Transistor Technology for RF Applications
作者: Tsai, Tzu-I
Chen, Kun-Ming
Lin, Horng-Chih
Lin, Ting-Yao
Su, Chun-Jung
Chao, Tien-Sheng
Huang, Tiao-Yuan
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: Junctionless (JL);low-frequency noise (LFN);poly-Si;radio frequency (RF);thin-film transistor (TFT)
公開日期: 1-Nov-2012
摘要: In this letter, for the first time, we experimentally investigate the radio-frequency (RF) characteristics and low-frequency noise (LFN) of n-type planar junctionless (JL) poly-Si thin-film transistors (TFTs). The fabricated JL devices show remarkable dc performance with good current drive and a high on-current/off-current ratio of 8 x 10(7). Furthermore, with the implementation of an in situ phosphorus-doped channel architecture and a salicide process, the JL device with a channel length of 0.4 mu m exhibits a cutoff frequency (f(t)) of 3.36 GHz and a maximum oscillation frequency (f(max)) around 7.37 GHz at a drain bias of 2 V. As far as LFN is concerned, the JL device shows approximately four orders of magnitude lower drain-current noise power spectral density (S-id) over conventional inversion-mode counterparts. These results demonstrate that the JL poly-Si TFT technique is promising for RF modules implemented in system-on-panel applications.
URI: http://dx.doi.org/10.1109/LED.2012.2212174
http://hdl.handle.net/11536/20403
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2212174
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 11
起始頁: 1565
結束頁: 1567
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