Title: High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization
Authors: Wang, Chao-Lung
Lee, I-Che
Wu, Chun-Yu
Chou, Chia-Hsin
Yang, Po-Yu
Cheng, Yu-Ting
Cheng, Huang-Chung
Department of Electronics Engineering and Institute of Electronics
Keywords: Excimer laser crystallization (ELC);location controlled;nanowire (NW);polycrystalline silicon (poly-Si)
Issue Date: 1-Nov-2012
Abstract: High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) are demonstrated using excimer laser crystallization to control the locations of grain boundaries two-dimensionally. Via the locally increased thickness of the amorphous-silicon (a-Si) film as the seeds, the cross-shaped grain boundary structures were produced among these thicker a-Si grids. The NW TFTs with one primary grain boundary perpendicular to the channel direction could be therefore fabricated to achieve an excellent field-effect mobility of 346 cm(2)/V . s and an on/off current ratio of 3 x 10(9). Furthermore, the grain-boundary-location-controlled NW TFTs also exhibited better reliability due to the control of grain boundary locations. This technology is thus promising for applications of low-temperature poly-Si TFTs in system-on-panel and 3-D integrated circuits.
URI: http://dx.doi.org/10.1109/LED.2012.2211857
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2211857
Volume: 33
Issue: 11
Begin Page: 1562
End Page: 1564
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