標題: Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation
作者: Wu, Shih-Chieh
Hou, Tuo-Hung
Chuang, Shiow-Huey
Chou, Hsin-Chih
Chao, Tien-Sheng
Lei, Tan-Fu
電子物理學系
電機工程學系
Department of Electrophysics
Department of Electrical and Computer Engineering
關鍵字: Nickel-titanium oxide (NiTiO3);High-kappa gate dielectric;Nitrogen implantation;Thin-film transistors (TFTs)
公開日期: 1-十二月-2012
摘要: This study demonstrates polycrystalline silicon thin-film transistors (poly-Si TFTs) integrated with a high-kappa nickel-titanium oxide (NiTiO3) gate dielectric using sol-gel spin-coating and nitrogen channel implantation. This novel fabrication method of the high-kappa NiTiO3 gate dielectric offers thin equivalent-oxide thickness and high gate capacitance density, favorable for increasing the current driving capability. Introducing nitrogen ions into the poly-Si using implantation effectively passivates the trap states not only in the poly-Si channel but also at the gate dielectric/poly-Si interface. The poly-Si NiTiO3 TFTs with nitrogen implantation exhibit significantly improved electrical characteristics, including lower threshold voltage, a steeper subthreshold swing, higher field-effect mobility, a larger on/off current ratio, and less threshold-voltage roll-off. Furthermore, the nitrogen implantation improves the reliability of poly-Si NiTiO3 TFTs against hot-carrier stress and positive bias temperature instability. (C) 2012 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2012.06.008
http://hdl.handle.net/11536/20393
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.06.008
期刊: SOLID-STATE ELECTRONICS
Volume: 78
Issue: 
起始頁: 11
結束頁: 16
顯示於類別:期刊論文


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  1. 000309313600003.pdf