Title: Orientation-Dependent Room-Temperature Ferromagnetism of FeSi Nanowires and Applications in Nonvolatile Memory Devices
Authors: Hung, Shih-Wei
Wang, Terry Tai-Jui
Chu, Li-Wei
Chen, Lih-Juann
材料科學與工程學系
Department of Materials Science and Engineering
Issue Date: 11-Aug-2011
Abstract: Self-catalyzed growth of FeSi nanowires has been achieved via a spontaneous chemical reaction method. The room-temperature ferromagnetism behavior compared to that of bulk FeSi at 4 K is attributed to the enhancement of magnetic coupling behavior correlated to different crystalline orientations. The resistivity of the single-stem FeSi nanowire was determined to be 2650 mu Omega.cm. The fabricated memory devices based on FeSi nanowires showed significant C-V hysteresis, exhibiting the memory effect. The strong memory effect can be accounted for by the presence of defects or dangling bonds on the surface of the FeSi nanowires embedded in the SiO(2) layer, which enhances the trapping density for nonvolatile memory applications.
URI: http://dx.doi.org/10.1021/jp201395r
http://hdl.handle.net/11536/20384
ISSN: 1932-7447
DOI: 10.1021/jp201395r
Journal: JOURNAL OF PHYSICAL CHEMISTRY C
Volume: 115
Issue: 31
Begin Page: 15592
End Page: 15597
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