標題: Formation of inverted-pyramid structure by modifying laser processing parameters and acid etching time
作者: Lin, Je-Wei
Liu, En-Ting
Wu, Chien-Hung
Hsieh, Ing-Jar
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
公開日期: 2011
摘要: This paper is to investigate the possibility to fabricate the inverted-pyramid structure on silicon wafer base solar cell by using laser scribing technology. The UV spectrometer and SEM had also been used to observe the reflectance and microstructure of the wafer surface. In this experiment, a Q-switched Nd:YAG laser operating at wavelength of 1064nm is used to scribe on the p-type wafer surface to produce inverted-pyramid structure. In order to remove the laser damage, we used acid etching and Alkaline etching solutions to smooth the damage region and inverted pyramid structure formed, simultaneously.
URI: http://hdl.handle.net/11536/20374
http://dx.doi.org/10.1149/1.3647856
ISBN: 978-1-60768-291-2
ISSN: 1938-5862
DOI: 10.1149/1.3647856
期刊: STUDENT POSTERS (GENERAL) - 219TH ECS MEETING
Volume: 35
Issue: 31
起始頁: 67
結束頁: 72
顯示於類別:會議論文


文件中的檔案:

  1. 000309546100009.pdf