標題: The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor
作者: Chung, Wan-Fang
Chang, Ting-Chang
Li, Hung-Wei
Chen, Yu-Chun
Li, Iue-Hen
Tseng, Tseung-Yuen
Tai, Ya-Hsiang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: We have investigated the gate bias stress-induced instability on the electrical properties with different pre-treatments for sol-gel derived amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The device with illuminating and heating pre-treatments under the positive/negative gate bias stress in vacuum had the smallest threshold voltage shift as the stress duration increased, while the device with oxygen gas pre-treatment exhibited an obvious variation. These electrical instabilities were ascribed to the charge trapping in the gate insulator and the oxygen/water adsorption on the active layer. It indicates that the specific pre-treatment for the a-IGZO film can improve the device stability. It also provides the important information for the subsequent passivation process concerning the pre-treatment of the active layer.
URI: http://hdl.handle.net/11536/20373
http://dx.doi.org/10.1149/1.3629976
ISBN: 978-1-60768-260-8
ISSN: 1938-5862
DOI: 10.1149/1.3629976
期刊: STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53)
Volume: 41
Issue: 6
起始頁: 273
結束頁: 281
顯示於類別:會議論文


文件中的檔案:

  1. 000309536900028.pdf