標題: Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin Film Transistors
作者: Chung, Wan-Fang
Chang, Ting-Chang
Li, Hung-Wei
Tseng, Tseung-Yuen
Tai, Ya-Hsiang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: This work shows the effects of post-deposition annealing atmosphere and duration on the properties of sol-gel derived amorphous indium zinc oxide thin film transistors (a-IZO TFTs). Two different post-deposition annealing atmospheres, nitrogen and oxygen, were used in this study. Experimental results showed that the O-2-annealed devices showed better electrical characteristics than the N-2-annealed samples. Under O-2-annealing, field effect mobility was enhanced to 1.47 cm(2)/V s, the threshold voltage increased to -4.61 V and the subthreshold swing improved to 0.86 V/dec. Also, the transfer characteristics of a-IZO TFTs improve with annealing time. X-ray photoelectron spectroscopy (XPS) analysis indicated that the chemical composition of the IZO film was modified by the oxygen annealing.
URI: http://hdl.handle.net/11536/20372
http://dx.doi.org/10.1149/1.3629975
ISBN: 978-1-60768-260-8
ISSN: 1938-5862
DOI: 10.1149/1.3629975
期刊: STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53)
Volume: 41
Issue: 6
起始頁: 265
結束頁: 271
Appears in Collections:Conferences Paper


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