標題: The Reliability Study and Device Modeling for p-HEMT Microwave Power Transistors
作者: Liu, S. L.
Chang, H. M.
Chang, T.
Kao, H. L.
Cheng, C. H.
Chin, A.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: In this paper, the commercial 0.5-mu m AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stress-induced trapping phenomena near two-dimensional electron gas layer should be responsible for the different drain current collapses. The decay level of the DC and the small-signal characteristics increases with the stress voltage and/or the operation temperature. The self-consistent model was established through the de-embedded and the non-linear fitting processes, which can be used to estimate the DC and RF small-signal characteristics degradation under high-drain voltage and high-temperature stress.
URI: http://hdl.handle.net/11536/20371
http://dx.doi.org/10.1149/1.3629965
ISBN: 978-1-60768-260-8
ISSN: 1938-5862
DOI: 10.1149/1.3629965
期刊: STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53)
Volume: 41
Issue: 6
起始頁: 175
結束頁: 187
顯示於類別:會議論文


文件中的檔案:

  1. 000309536900017.pdf