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dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorKakushima, Kuniyukien_US
dc.contributor.authorIwai, Hiroshien_US
dc.contributor.authorShie, Tin-Enen_US
dc.contributor.authorHuang, Guan-Ningen_US
dc.contributor.authorLu, Po-Chingen_US
dc.contributor.authorLin, Ting-Chunen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2014-12-08T15:28:07Z-
dc.date.available2014-12-08T15:28:07Z-
dc.date.issued2011en_US
dc.identifier.isbn978-1-60768-214-1en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/20365-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3569932en_US
dc.description.abstractIn this study, we investigate the composite La2O3/HfO2 high k dielectric as the gate oxide for n-InAs metal-oxide semiconductor (MOS) capacitor. The La2O3 was used for its high k value and HfO2 was used as the diffusion barrier and was deposited between La2O3 and InGaAs to prevent the Inter-diffusion between InAs and La(2)OZ(3) layers after post deposition annealing (PDA). Finally, we demonstrate the La2O3/HfO2 composite oxide structure as the high K dielectric for n-InAs MOS capacitor with enhanced capacitance for the MOS capacitor.en_US
dc.language.isoen_USen_US
dc.titleStudy of La2O3/HfO2 Gate Dielectric for n-InAs Metal-Oxide-Semiconductor Capacitoren_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3569932en_US
dc.identifier.journalDIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3en_US
dc.citation.volume35en_US
dc.citation.issue3en_US
dc.citation.spage397en_US
dc.citation.epage401en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000309539300037-
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