標題: Study of La2O3/HfO2 Gate Dielectric for n-InAs Metal-Oxide-Semiconductor Capacitor
作者: Lin, Yueh-Chin
Chang, Chia-Hua
Kakushima, Kuniyuki
Iwai, Hiroshi
Shie, Tin-En
Huang, Guan-Ning
Lu, Po-Ching
Lin, Ting-Chun
Chang, Edward Yi
交大名義發表
National Chiao Tung University
公開日期: 2011
摘要: In this study, we investigate the composite La2O3/HfO2 high k dielectric as the gate oxide for n-InAs metal-oxide semiconductor (MOS) capacitor. The La2O3 was used for its high k value and HfO2 was used as the diffusion barrier and was deposited between La2O3 and InGaAs to prevent the Inter-diffusion between InAs and La(2)OZ(3) layers after post deposition annealing (PDA). Finally, we demonstrate the La2O3/HfO2 composite oxide structure as the high K dielectric for n-InAs MOS capacitor with enhanced capacitance for the MOS capacitor.
URI: http://hdl.handle.net/11536/20365
http://dx.doi.org/10.1149/1.3569932
ISBN: 978-1-60768-214-1
ISSN: 1938-5862
DOI: 10.1149/1.3569932
期刊: DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3
Volume: 35
Issue: 3
起始頁: 397
結束頁: 401
顯示於類別:會議論文


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